DocumentCode
3484322
Title
Coherent lifetime of electron hole pairs in InGaAsP measured by the Franz-Keldysh effect
Author
Jaeger, A. ; Weiser, G.
Author_Institution
Dept. of Phys. & Center of Mater. Sci., Marburg Univ., Germany
Volume
2
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
216
Abstract
Electric field induced changes of the density of states are used to determine the coherent lifetime of excited states. Considerable variation with composition is observed in the quaternary material InGaAsP confirming similar observations of the excitonic linewidth
Keywords
indium compounds; Franz-Keldysh effect; InGaAsP; coherent lifetime; composition; density of states; electric field induced changes; electroabsorption spectra; electron hole pairs; excited states; excitonic linewidth; quaternary material; Absorption; Capacitive sensors; Charge carrier processes; Composite materials; Excitons; Fluctuations; Gaussian processes; MOCVD; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586448
Filename
586448
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