• DocumentCode
    3485096
  • Title

    Reliability Perspective of High-k Gate Stack Assessed by Temperature Dependence of Dielectric Breakdown

  • Author

    Okada, Kenji ; Horikawa, Tsuyoshi ; Satake, Hideki ; Inumiya, Seiji ; Akasaka, Yasushi ; Ootsuka, Fumio ; Nara, Yasuo ; Ota, Hiroyuki ; Nabatame, Toshihide ; Toriumi, Akira

  • fYear
    2007
  • fDate
    12-14 June 2007
  • Firstpage
    34
  • Lastpage
    35
  • Abstract
    Apparent difference of the dielectric breakdown behavior between high-k stack and the conventional SiO2 is investigated by the temperature dependence of TDDB lifetime. It is clarified that the temperature dependence of TDDB lifetime in high-k stack can be described by two parameters, which is identical to the case of conventional SiO2.
  • Keywords
    electric breakdown; high-k dielectric thin films; semiconductor device reliability; silicon compounds; SiO2; dielectric breakdown; high k gate stack; reliability perspective; temperature dependence; Acceleration; Aluminum oxide; Dielectric breakdown; Electric breakdown; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Stress; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2007 IEEE Symposium on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-900784-03-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2007.4339716
  • Filename
    4339716
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3485096