DocumentCode
348520
Title
Optically-controlled optical gate using a double diode structure
Author
Yairi, Micah B. ; Demir, Hilmi V. ; Coldren, Chris W. ; Miller, David A B ; Harris, J.S.
Author_Institution
Edward L. Ginzton Lab., Stanford Univ., CA, USA
Volume
2
fYear
1999
fDate
1999
Firstpage
770
Abstract
A new device concept enabling ultra-short optically controlled optical gating is demonstrated. Using a dual-diode GaAs multiple-quantum well (MQW) structure, low power surface-normal switching times of ~10 ps are achieved in this proof-of-principle device
Keywords
high-speed optical techniques; optical logic; optical switches; quantum well lasers; 10 ps; 600 fJ; 9.3 ps; GaAs; double diode structure; dual-diode GaAs multiple-quantum well structure; low power surface-normal switching times; optically-controlled optical gate; proof-of-principle device; ultra-short optically controlled optical gating; Gallium arsenide; High speed optical techniques; Optical control; Optical devices; Optical sensors; P-i-n diodes; Quantum well devices; Semiconductor diodes; Telecommunication control; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-5634-9
Type
conf
DOI
10.1109/LEOS.1999.811961
Filename
811961
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