Selective ion formation in a multi-cusp sputtering source

Mass selected ion production by chemical sputtering processes opens possibilities to synthesize films. In this work results of attempts for creating ions of C₂H₂^-, C ₂^-, C₂H^-, O^-, O ₂^-, Ti₂^-, and TiO₃^-, by alternately using C and Ti as the targets in a multi-cusp sputtering ion source are reported. The efficiencies of production for carbon negative ions from the carbon target in H₂/Ar and H₂/CH₄ discharges and titanium negative ions from the titanium target in O₂/Ar and H₂O/Ar discharges showed the dependence on the history of the ion source operation. The formations of TiO₂^- and TiO₃^- were found affected by the relative amount of O₂ in the O₂/Ar discharge