DocumentCode
3486616
Title
An electro-thermal analysis of lateral double-diffused MOSFET (LDMOS) using FEM
Author
Ren, Zhen ; Shi, Yan-Bing ; Yin, Wen-Yan
Author_Institution
Center for Microwave & RF Technol., Shanghai Jiao Tong Univ., Shanghai
fYear
2008
fDate
16-20 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
In this paper, transient electro-thermal analysis of the LDMOS under an EMP is performed using self-developed hybrid time-domain FEM. The maximum temperature in the LDMOS is obtained as the injected voltage pulse fluctuates. Temperature distribution in the LDMOS at every time point is also captured.
Keywords
MOSFET; electromagnetic interference; finite element analysis; thermal analysis; LDMOS; lateral double-diffused MOSFET; self-developed hybrid time-domain FEM; temperature distribution; transient electrothermal analysis; Charge carrier processes; Current density; EMP radiation effects; Electromagnetic interference; MOSFET circuits; Nonlinear equations; Poisson equations; Semiconductor device reliability; Semiconductor devices; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location
Macau
Print_ISBN
978-1-4244-2641-6
Electronic_ISBN
978-1-4244-2642-3
Type
conf
DOI
10.1109/APMC.2008.4958299
Filename
4958299
Link To Document