DocumentCode
3486975
Title
Characterization of P+ implanted SiO2 powders
Author
Kajiyama, Kenji ; Suzuki, Yasuo ; Kokubo, Tadashi ; Kawashita, Masakazu ; Miyaji, Fumiaki
Author_Institution
Ion Eng. Res. Inst., Osaka, Japan
fYear
1996
fDate
16-21 Jun 1996
Firstpage
816
Lastpage
819
Abstract
31P ions were implanted into high-purity SiO2 sphere powders of 20-30 μmø at 50 keV energy with 1.5×1017/cm2 dose utilizing a modified medium-current implanter and, for reference, into SiO2 plate at 200 keV with 1.0×1018/cm2 utilizing a conventional medium-current implanter. P doping profile was measured by 3D-SIMS with 0.5 μmø Cs+ primary beam. Buried high P-concentration region was revealed. Implanted structure was observed by XTEM, EPMA and μ-RHEED: tens-nm-diameter sphere-like balls of phospho-silicate glass were distributed around the projected range. The top surface was almost unchanged from the substrate and was so thick as to prevent P elusion into hot water
Keywords
doping profiles; ion implantation; phosphorus; phosphosilicate glasses; powder technology; secondary ion mass spectra; silicon compounds; μ-RHEED; 3D-SIMS; 50 keV; EPMA; P ion implantation; SiO2 sphere powder; SiO2:P; XTEM; buried concentration; doping profile; medium-current implanter; phosphosilicate glass; Area measurement; Atomic measurements; Cancer; Catheters; Glass; Humans; Neoplasms; Neutrons; Powders; Raw materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586593
Filename
586593
Link To Document