Effect of Sn doping on the properties of yttrium modified lead zirconate titanate stannate system

Author

Pathak, Abhishek ; Chatterjee, Ratnamala ; Goel, T.C.

Author_Institution

Dept. of Phys., Indian Inst. of Technol., New Delhi, India

fYear

2005

fDate

11-14 Sept. 2005

Firstpage

348

Lastpage

351

Abstract

The effects of stannate doping on the phase transition, P-E electrical hysteresis and shape memory behaviors of yttrium modified lead zirconate titanate stannate (with Ti=0.085) were examined. The increasing Sn/Zr ratios were investigated experimentally for their effect on obtaining the antiferroelectric phase at room temperature. It is observed that although the strain increases with increasing Sn/Zr ratio, all the samples (except x=0.4 and 0.5) are ferroelectric at room temperature. The sample with x=0.4 that was reported [Ref.2] to be antiferroelectric at 40°C, shows paraelectric or compensated AFE behavior at room temperature.

Keywords

antiferroelectric materials; dielectric hysteresis; doping; ferroelectric transitions; lead compounds; shape memory effects; yttrium compounds; 293 to 298 K; 40 C; Sn doping effect; YPbZrO₃TiO₃SnO₃; antiferroelectric phase; compensated antiferroelectric behavior; electrical hysteresis; ferroelectric phase; paraelectric behavior; phase transition; room temperature; shape memory behaviors; stannate doping effect; yttrium modified lead zirconate titanate stannate system; Capacitive sensors; Doping; Ferroelectric materials; Hysteresis; Shape; Temperature; Tin; Titanium compounds; Yttrium; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrets, 2005. ISE-12. 2005 12th International Symposium on

Print_ISBN

0-7803-9116-0

Type

conf

DOI

10.1109/ISE.2005.1612395

Filename

1612395