Admittance spectroscopy of interface states in polymer MIS devices

Author

Taylor, D.M. ; Torres, I. ; Drysdale, J.

Author_Institution

Sch. of Informatics, Univ. of Wales, Bangor, UK

fYear

2005

fDate

11-14 Sept. 2005

Firstpage

370

Lastpage

373

Abstract

We have measured the admittance of metal-insulator-semiconductor (MIS) structures based on the p-type semiconducting polymer poly(3-hexylthiophene) with polyimide or polysilsequioxane insulating layers. In both cases, evidence is presented for the presence of fast and slow hole trapping interface states at the semiconductor-insulator interface. Evidence from photocapacitance measurements is also presented which suggests also the presence of electron-trapping interface states.

Keywords

MIS devices; electric admittance; electron traps; hole traps; interface states; organic semiconductors; photocapacitance; polymers; semiconductor-insulator boundaries; admittance spectroscopy; electron-trapping interface states; hole trapping interface states; metal-insulator-semiconductor structures; p-type semiconducting polymer poly(3-hexylthiophene); photocapacitance measurements; polyimide insulating layers; polymer MIS devices; polysilsequioxane insulating layers; semiconductor-insulator interface; Admittance measurement; Electron traps; Interface states; MIS devices; Metal-insulator structures; Plastic insulation; Polyimides; Polymers; Semiconductivity; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrets, 2005. ISE-12. 2005 12th International Symposium on

Print_ISBN

0-7803-9116-0

Type

conf

DOI

10.1109/ISE.2005.1612400

Filename

1612400