• DocumentCode
    3488394
  • Title

    High linearity, current drivability and fmax using pseudomorphic GaAs double-heterojunction HEMT (DHHEMT)

  • Author

    Qun, Zheng Hai ; Ing, Ng Geok ; Qiang, Zhang Yun ; Radhakrishnan, K. ; Yan, Lee Kok ; Yong, Chee Peng ; Siu, Tse Man ; Xian, Weng Jun ; Fatt, Yoon Soon

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • fYear
    1996
  • fDate
    26-28 Nov 1996
  • Firstpage
    12
  • Lastpage
    14
  • Abstract
    We report the fabrication and characterization of pseudomorphic GaAs DHHEMTs. Higher current level and broader Gm-Id s characteristics can be obtained simultaneously using DHHEMTs compared to those of SHHEMTs. For 1.25 μm gate-length devices, the average fT is 12 GHz and fmax is greater than 50 GHz. The high linearity, current drivability and fmax show that DHHEMTs are attractive for applications such as wireless communication
  • Keywords
    III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave field effect transistors; microwave measurement; 1.25 micron; 12 GHz; Gm-Ids characteristics; GaAs; current drivability; current level; linearity; pseudomorphic double-heterojunction HEMT; wireless communication; Buffer layers; Carrier confinement; DH-HEMTs; Gallium arsenide; Gold; Helium; Indium gallium arsenide; Linearity; Lithography; Superlattices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
  • Conference_Location
    Penang
  • Print_ISBN
    0-7803-3388-8
  • Type

    conf

  • DOI
    10.1109/SMELEC.1996.616441
  • Filename
    616441
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3488394