DocumentCode
3488415
Title
Preparation and gas-sensing properties of bis[phthalocyaninato] Sm[Pc*]2 LB films
Author
Jiang, Yadong ; Xie, Guangzhong ; Xie, Dan ; Li, Wei ; Wu, Zhiming
Author_Institution
Sch. of Opto-Electron. Inf., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2005
fDate
11-14 Sept. 2005
Firstpage
396
Lastpage
399
Abstract
Bis[phthalocyaninato] Sm[Pc*]2 [Pc*=Pc(OC8H17)8] has a sandwich-type structure with samarium at the center of two phthalocyanine ligands each other in a staggered form. Spreading solution of 0.42 mg/ml was prepared by dissolving Sm[Pc*]2 in chloroform before Sm[Pc*]2 Langmuir-Blodgett (LB) films were deposited on silicon substrate. In order to produce stable LB films, Sm[Pc*]2 was mixed with octadecanol (OA) at different molar ratios of 1:1, 1:3 ,1:6 and 1:9. It is found that a mixture of 1(Sm[Pc*]2):3(OA) generates an excellent material for the fabrication of gas-sensing LB films resulting from the optimization of film-forming characteristics. A new gas sensor has been fabricated by incorporating the multiplayer LB film into the gate electrode of charge-flow transistor (CFT), forming an array of charge-flow transistor. Given a gate voltage (VGs) which is greater than threshold voltage (VTH), a delay was observed in the response of the drain current. This is due to the time taken for the resistive gas-sensing film to charge up to VGS. This characteristic delay was found to depend on the concentration of NO2 gas. Results are presented showing that the device can detect reversibly the concentration of NO2 gas down to 5ppm at room temperature.
Keywords
Langmuir-Blodgett films; gas sensors; organometallic compounds; sandwich structures; 293 to 298 K; NO2 gas concentration; Si; bis[phthalocyaninato]Sm[Pc*]2 Langmuir-Blodgett film preparation; charge-flow transistor; chloroform; drain current; film-forming characteristics; gas-sensing properties; gate electrode; gate voltage; octadecanol; phthalocyanine ligands; room temperature; sandwich-type structure; silicon substrate; threshold voltage; Character generation; Delay; Fabrication; Gas detectors; Samarium; Semiconductor films; Sensor arrays; Silicon; Substrates; Threshold voltage; Bis[phthalocyaninato] S; Charge-flow transistor (CFT); Gas sensor; Langmuir-Blodgett (LB) film;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 2005. ISE-12. 2005 12th International Symposium on
Print_ISBN
0-7803-9116-0
Type
conf
DOI
10.1109/ISE.2005.1612407
Filename
1612407
Link To Document