Computer Modeling of Shottky Diodes Low-Frequency Noise at Direct Current Bias and in a Mode of Detecting VHF Carrier

Author

Malyshev, V.M. ; Borodin, A.M.

Author_Institution

St. Petersburg State Polytech. Univ.

fYear

2006

fDate

20-21 Sept. 2006

Firstpage

148

Lastpage

160

Abstract

Schottky diode LF noise may be sufficiently different at direct bias and in VHF detection mode. Results of LF noise diode computer modeling carried out by means of AWR LtMicrowave OfficeGt using standard SPICE Schottky diode model is not adequate to experimental data in these modes. Advanced Schottky diode noise model including serial resistance fluctuations, noise models of central and boundary areas was simulated using AWR LtMicrowave OfficeGt. The results of this modeling sufficiently better corresponds to experimental data as at direct bias so at VHF detection mode

Keywords

Schottky diodes; semiconductor device models; semiconductor device noise; Schottky diode LF noise; Schottky diode noise model; Schottky diodes low-frequency noise; VHF carrier detection; VHF detection mode; direct current bias; serial resistance fluctuations; Arthritis; Computational modeling; Diodes; Fluctuations; Helium; Immune system; Indium tin oxide; Low-frequency noise; Radio frequency; SPICE;

fLanguage

English

Publisher

ieee

Conference_Titel

Actual Problems of Electron Devices Engineering, International Conference on

Conference_Location

Saratov

Print_ISBN

1-4244-0247-6

Electronic_ISBN

1-4244-0247-6

Type

conf

DOI

10.1109/APEDE.2006.307402

Filename

4099616