Electron traps at HfO2/SiOx interfaces

Electron traps in HfO₂ have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the ldquointerlayerrdquo of SiO_x commonly present in high-k/silicon stacks. On the inner side, between SiO_x and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiO_x/HfO₂ interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack.