Receiving and Researching Electrical and Physical Properties of Amorphous Superlattices with Quantum Dots Based on SIXC1-X : H / NC-SI : H

Author

Nefedov, D.V. ; Yafarov, R.K.

Author_Institution

Inst. of Radioeng. & Electron., Russian Acad. of Sci., Saratov

fYear

2006

fDate

20-21 Sept. 2006

Firstpage

339

Lastpage

345

Abstract

Investigated conditions of receiving nanodimensions crystallites of silicon in microwave plasma of gas discharge of low pressure on noncrystallite substrate with different types of interaction on interphase board. As shown, their formation occurs by infill gaps of initial relief of surface substrate. Established that insertion particles of silicon nanocrystallites in amorphous silicon carbide matrix influence on photoelectric properties received multilayers heterostructures and possess properties of electric active multielectronic centers

Keywords

amorphous semiconductors; nanostructured materials; nitrogen compounds; photoelectricity; quantum dots; semiconductor superlattices; silicon compounds; NC-Si:H; Si_xC_1-x:H; active multielectronic centers; amorphous silicon carbide matrix; amorphous superlattices; electrical properties; gas discharge; interphase board; microwave plasma; noncrystallite substrate; photoelectric properties; physical properties; quantum dots; silicon crystallites; Amorphous materials; Crystallization; Discharges; Helium; Indium tin oxide; Plasma properties; Quantum dots; Silicon; Superlattices; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Actual Problems of Electron Devices Engineering, International Conference on

Conference_Location

Saratov

Print_ISBN

1-4244-0246-8

Electronic_ISBN

1-4244-0247-6

Type

conf

DOI

10.1109/APEDE.2006.307435

Filename

4099649