DocumentCode
3489837
Title
Parametric expression of subthreshold slope using threshold voltage parameters for MOSFET statistical modeling
Author
Min, Kyeong-Sik ; Lee, Kwyro
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
fYear
1996
fDate
26-28 Nov 1996
Firstpage
50
Lastpage
54
Abstract
In this paper, we propose a newly developed subthreshold slope (ideality factor) model, whose parameters are solely determined from the threshold voltage data. We succeed to express the ideality factor in terms of the threshold voltage parameters obtained from the body and DIBL effects, which can take care of its dependence on the process data
Keywords
MOSFET; semiconductor device models; DIBL effect; MOSFET; body effect; ideality factor; statistical model; subthreshold slope; threshold voltage parameters; Capacitance; Circuit simulation; Doping profiles; Length measurement; MOSFET circuits; Power dissipation; Semiconductor device modeling; Semiconductor process modeling; Solid modeling; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location
Penang
Print_ISBN
0-7803-3388-8
Type
conf
DOI
10.1109/SMELEC.1996.616450
Filename
616450
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