DocumentCode
3490047
Title
A comparative study of non-linearities in bulk and SOI linear resistors based on 2- and 4-transistor structures
Author
Gentinne, B. ; Dessard, V. ; Louveaux, S. ; Flandre, D. ; Colinge, J.P.
Author_Institution
DICE, Univ. Catholique de Louvain, Belgium
fYear
1995
fDate
3-5 Oct 1995
Firstpage
64
Lastpage
65
Abstract
Both measurements and simulations based on accurate current models prove that the use of a SOI 4-transistor balanced structure as a passive triode resistor for continuous time MOSFET-C filters or integrators can give a linearity improvement of up to 20 dB over bulk counterparts
Keywords
CMOS analogue integrated circuits; continuous time filters; integrating circuits; resistors; silicon-on-insulator; SOI CMOS analog circuits; balanced structures; continuous time MOSFET-C filters; current model; four-transistor structures; integrators; linear resistors; nonlinearities; passive triode resistors; simulation; two-transistor structures; Analog circuits; Analytical models; CMOS analog integrated circuits; High power amplifiers; Linearity; Numerical models; Power harmonic filters; Resistors; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location
Tucson, AZ
Print_ISBN
0-7803-2547-8
Type
conf
DOI
10.1109/SOI.1995.526462
Filename
526462
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