DocumentCode
3490160
Title
Extraction of thermal resistance for fully-depleted SOI MOSFETs
Author
Lee, T.-Y. ; Fox, R.M.
Author_Institution
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fYear
1995
fDate
3-5 Oct 1995
Firstpage
78
Lastpage
79
Abstract
This paper presents a convenient and direct method for extracting thermal impedance for fully-depleted SOI MOSFETs. The results are consistent with thermal resistance calculations using a physical model. Demonstration of the use of a Thermal Impedance Pre-Processor applied to an electrothermal circuit model in the simulator Saber to predict thermal transient response is also provided along with measurement data
Keywords
MOSFET; semiconductor device models; silicon-on-insulator; thermal resistance; Saber simulator; Thermal Impedance Pre-Processor; electrothermal circuit model; fully-depleted SOI MOSFETs; self-heating; thermal resistance; transient response; Circuit simulation; Electrical resistance measurement; Immune system; Impedance; MOSFETs; Pulse measurements; Switches; Temperature; Thermal resistance; Transient response;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location
Tucson, AZ
Print_ISBN
0-7803-2547-8
Type
conf
DOI
10.1109/SOI.1995.526469
Filename
526469
Link To Document