Bandgap engineering technology for suppressing the substrate-floating-effect in 0.15 μm SOI-MOSFETs

Author

Yoshimi, M. ; Nishiyama, A. ; Terauchi, M. ; Arisumi, O. ; Murakoshi, A. ; Ushiku, Y. ; Takeno, S. ; Suzuki, K.

Author_Institution

ULSI Res. Labs., Toshiba Corp., Kawasaki, Japan

fYear

1995

fDate

3-5 Oct 1995

Firstpage

80

Lastpage

81

Abstract

The substrate floating effect is the most fundamental problem in SOI-MOSFETs. Conventional countermeasures, such as body-contact, LDD structure are accompanied by area penalty, Id degradation and other drawbacks. To suppress this effect, we have proposed the bandgap engineering method, in which a narrow bandgap material is formed in the source region. In this paper, an ideal structure for the bandgap engineering is discussed and actually achievable performance is estimated based on simulations and experiments for 0.15 μm SOI-MOSFETs

Keywords

MOSFET; energy gap; semiconductor technology; silicon-on-insulator; 0.15 micron; SOI-MOSFETs; bandgap engineering technology; narrow bandgap material; substrate-floating-effect; Annealing; Degradation; Design engineering; Germanium silicon alloys; Heterojunctions; MOSFETs; Photonic band gap; Research and development; Silicon germanium; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1995. Proceedings., 1995 IEEE International

Conference_Location

Tucson, AZ

Print_ISBN

0-7803-2547-8

Type

conf

DOI

10.1109/SOI.1995.526470

Filename

526470