DocumentCode
3490390
Title
A 26 volts, 45 Watts GaAs pHEMT for 2 GHz WCDMA applications
Author
Piel, Pierre-Marie ; Miller, Monte ; Green, Bruce
Author_Institution
RF Div., Motorola SPS, Tempe, AZ, USA
Volume
3
fYear
2004
fDate
6-11 June 2004
Firstpage
1363
Abstract
An unmatched power AlGaAs/InGaAs pHEMT transistor in a ceramic package has been developed for 3G infrastructure applications. Operating at 2.14 GHz, under two carrier WCDMA a typical device delivers more than 9.2 Watts of average envelope power at -37 dBc IMD with drain efficiencies as high as 32% in class AB mode. Our paper presents the device technology, and the DC and RF performance under CW, WCDMA, and 2 carrier WCDMA signals.
Keywords
3G mobile communication; ceramic packaging; code division multiple access; power HEMT; power amplifiers; 2 GHz; 2 carrier WCDMA; 2.14 GHz; 26 V; 3G infrastructure applications; 45 W; 9.2 W; AlGaAs-InGaAs; CW signals; DC performance; RF performance; WCDMA signals; ceramic package; unmatched power pHEMT transistor; Capacitance; Ceramics; Gallium arsenide; Multiaccess communication; PHEMTs; Packaging; Power generation; RF signals; Radio frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-8331-1
Type
conf
DOI
10.1109/MWSYM.2004.1338822
Filename
1338822
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