DocumentCode
3490462
Title
AlN Contour-Mode Vibrating RF MEMS for Next Generation Wireless Communications
Author
Piazza, Gianluca ; Stephanou, Philip J. ; Pisano, Albert P.
Author_Institution
Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA
fYear
2006
fDate
19-21 Sept. 2006
Firstpage
62
Lastpage
65
Abstract
AlN contour-mode vibrating RF MEMS resonator technology is described as capable of low-loss filtering and frequency synthesis for next generation wireless devices. Contour-mode piezoelectric resonators can span frequencies from 10 MHz up to few GHz on the same silicon chip offering high quality factors in air (1,000-4,000) and low motional resistance (25-700 Omega). Low loss (<- 1.5 dB) electrically and mechanically coupled filters and low phase noise oscillators can be easily implemented using this resonator technology. Low power transceiver architectures based on frequency hopping, multi-band filtering and direct frequency synthesis are presented as next generation wireless solutions that will be enabled by this new class of AIN contour-mode resonators
Keywords
III-V semiconductors; aluminium compounds; crystal resonators; micromechanical resonators; phase noise; transceivers; wide band gap semiconductors; AlN; RF MEMS resonator; direct frequency synthesis; frequency hopping; multiband filtering; phase noise; piezoelectric resonators; transceiver architectures; wireless communications; Couplings; Electric resistance; Filtering; Frequency synthesizers; Q factor; Radiofrequency microelectromechanical systems; Resonant frequency; Resonator filters; Silicon; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European
Conference_Location
Montreux
ISSN
1930-8833
Print_ISBN
1-4244-0303-0
Type
conf
DOI
10.1109/ESSCIR.2006.307531
Filename
4099704
Link To Document