High power and high efficiency 30 W compact S-band HBT power chips with gold or diamond heat spreaders

Author

Piotrowicz, S. ; Chartier, E. ; Jacquet, J.C. ; Floriot, D. ; Coupat, J.M. ; Framery, C. ; Eudeline, P. ; Auxemery, P.

Author_Institution

THALES Res. & Technol., Orsay, France

Volume

3

fYear

2004

fDate

6-11 June 2004

Firstpage

1527

Abstract

HBT power technology offers an excellent compromise for high power and high efficiency amplifiers up to the Ku band. In this paper, we present the performances of GaInP/GaAs power chips. Two different approaches to thermal management were proposed for very high power levels. Pulsed power measurements of power chips integrating thick gold or diamond as heat spreaders are reported. An output power of 31 W with 49.5% of PAE was obtained at 2.9 GHz on 3.3mm² of GaAs area. This corresponds to a power density of 9.4W/mm². These power chips constitute very attractive chips for compact high power, high efficiency amplifiers for radar and communication systems.

Keywords

diamond; gallium compounds; gold; heterojunction bipolar transistors; microwave integrated circuits; power amplifiers; power integrated circuits; power measurement; radar; 2.9 GHz; 31 W; GaAs; GaInP; HBT power technology; Ku band; S-band HBT power chips; communication systems; compact HBT power chips; diamond heat spreaders; gold heat spreaders; high efficiency HBT power chips; high efficiency amplifiers; high power HBT power chips; high power amplifier; power density; power levels; pulsed power measurements; radar systems; thermal management; Energy management; Gallium arsenide; Gold; Heterojunction bipolar transistors; High power amplifiers; Power generation; Power measurement; Pulse amplifiers; Pulse measurements; Thermal management;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1338868

Filename

1338868