Metrological procurement for modeling conductivity of ultra thin dielectrics with non-uniform boundary by means of TCAD SENTAURUS

Author

Perov, G.V. ; Glukhov, A.V. ; Alekseev, A.A. ; Sedinin, V.I.

Author_Institution

Novosibirsk Plant of Semicond. Devices, R&D Unit, Siberian State Univ. for Telecommun. & Inf., Novosibirsk, Russia

fYear

2012

fDate

2-4 Oct. 2012

Firstpage

112

Lastpage

115

Abstract

Is developed the graphic and technological model of reprogrammed element memory of the actuation device of receiver Glonass navigator in the environment of SENTAURUS TCAD. Is calculation of distribution of electric fields in thin dielectrics on a surface of a shutter with a non-uniform horizontal and vertical profile of relief. The model can be used for calculation of electronic and ionic currents, of conductivity of a dielectric on a shutter depending on heterogeneity of border, definition of their limits parametr of element memory.

Keywords

dielectric thin films; electric fields; ionic conductivity; satellite navigation; technology CAD (electronics); TCAD SENTAURUS; electronic currents; graphic model; ionic currents; metrological procurement; modeling conductivity; nonuniform boundary; receiver Glonass navigator; reprogrammed element memory; technological model; ultra thin dielectrics; Communications technology; Conductivity; Dielectrics; Educational institutions; Procurement; Semiconductor devices; Three-dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Actual Problems of Electronics Instrument Engineering (APEIE), 2012 11th International Conference on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4673-2842-5

Type

conf

DOI

10.1109/APEIE.2012.6628969

Filename

6628969