Simulation and analysis of 980nm intracavity-contacted VCSEL

Author

Wan, Lingmin ; Feng, Yuan ; Xu, Peng ; Jin, Guolie ; Zhao, Yingjie ; Zhao, Yusi

Author_Institution

Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2012

fDate

23-25 Aug. 2012

Firstpage

133

Lastpage

135

Abstract

In this paper, optical and electrical properties of the traditional and intracavity-contacted structures of 980nm VCSELs were simulated in the case of the same epitaxial growth by Crosslight PICS3D. Threshold current of the traditional structure device was 8.76mA and the one of intracavity-contacted structure device was 6.23mA. When operating current was 25 mA, the output power of the traditional structure device was 5.6mW and the one of intracavity-contacted structure device was 7mW. Compared with the traditional structure, the threshold current of intracavity-contacted structure device was reduced by 2.53mA, the output power was increased to 1.25 times, optical and electrical properties of the device were improved.

Keywords

epitaxial growth; laser beams; laser cavity resonators; quantum well lasers; semiconductor epitaxial layers; surface emitting lasers; Crosslight PICS3D; current 25 mA; current 6.23 mA; electrical properties; epitaxial growth; intracavity-contacted VCSEL; intracavity-contacted structures; laser output power; operating current; optical properties; power 7 mW; threshold current; wavelength 980 nm; Integrated optics; Optical devices; Optical fibers; Power generation; Resistance heating; Threshold current; Vertical cavity surface emitting lasers; VCSEL; intracavity-contacted structure; output power; threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics (ICOM), 2012 International Conference on

Conference_Location

Changchun, Jilin

Print_ISBN

978-1-4673-2638-4

Type

conf

DOI

10.1109/ICoOM.2012.6316234

Filename

6316234