Modelling of multicellular microwave transistors using the scaling approach

Author

Hajji, R. ; Kouki, A.B. ; Ghannouchi, F.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Montreal Polytech. Sch., Que., Canada

Volume

2

fYear

1995

fDate

5-8 Sep 1995

Firstpage

1019

Abstract

A systematic approach to the modelling of multicellular power transistors is presented. It is based on characterisation and identification (modelling) of the elementary cell of the transistor, and modelling of input and output interconnections using the physical mask of the device. This model enables the small-signal performance of heterojunction bipolar transistors (HBT) to be predicted precisely. The obtained multicell model has been validated by comparison of its predictions with experimental measurements on various HBTs having different numbers of elementary cells

Keywords

heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; heterojunction bipolar transistors; interconnections; mask; microwave transistors; multicell model; power transistors; scaling; small-signal characteristics; Circuits; Content addressable storage; Convergence; Fabrication; Heterojunction bipolar transistors; Linear predictive coding; MESFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 1995. Canadian Conference on

Conference_Location

Montreal, Que.

ISSN

0840-7789

Print_ISBN

0-7803-2766-7

Type

conf

DOI

10.1109/CCECE.1995.526602

Filename

526602