A fast-speed pulse detector based on Si-Schottky diode

Author

Wang, Ling ; Xiao, Fei ; Tang, Xiao-Hong ; Wu, Shang-Yun

Author_Institution

Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu

fYear

2008

fDate

16-20 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

A fast-speed pulse detector based on Si-Schottky diode is designed in the waveguide. It is very easy to operate this detector because it dispenses with bias current & synch-pulse source. Experimental results show that the pulse response time of this detector is less than 220 ps in the Ka band. In addition, it is characterized by high sensitivity of 1.2 mV/muW. Another advantage of the detector is its tunable range as wide as 35~39 GHz, by tuning circuit.

Keywords

Schottky diodes; circuit tuning; high-speed techniques; microwave detectors; silicon; waveguide components; Schottky diode; Si; bias current; fast-speed pulse detector; frequency 35 GHz to 39 GHz; millimeter-wave detector; synch-pulse source; waveguide design; Delay; Detectors; Equivalent circuits; Frequency; Optical pulses; Pulse circuits; Pulse measurements; Schottky diodes; Semiconductor diodes; Time measurement; Millimeter-wave fast-speed pulse detector; Si Schottky diode; high sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Conference_Location

Macau

Print_ISBN

978-1-4244-2641-6

Electronic_ISBN

978-1-4244-2642-3

Type

conf

DOI

10.1109/APMC.2008.4958624

Filename

4958624