High performance InGaAs/InGaAsP/AlGaAs diode lasers (λ=0.98 μm) grown by MOCVD

Author

Yang, Guowen ; Hwu, R. Jennifer ; Chern, J.H. ; Sadwick, Larry ; Xu, Z.T.

Author_Institution

Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA

Volume

1

fYear

1999

fDate

1999

Firstpage

76

Abstract

We have successfully fabricated high performance 0.98 μm InGaAs-InGaAsP-AlGaAs diode lasers. This material system demonstrated the advantages of flexibility in structure design, simple epitaxial growth, improvement of surface morphology, low vertical beam divergence, high efficiency, high characteristic temperature, and superior reliability

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser reliability; laser transitions; optical fabrication; semiconductor lasers; 0.98 mum; InGaAs-InGaAsP-AlGaAs; InGaAs-InGaAsP-AlGaAs diode lasers; InGaAs/InGaAsP/AlGaAs diode lasers; MOCVD growth; high characteristic temperature; high efficiency; laser reliability; low vertical beam divergence; simple epitaxial growth; structure design; surface morphology; Diode lasers; Indium gallium arsenide; MOCVD; Morphology; Optical materials; Optical refraction; Optical variables control; Optical waveguides; Power system reliability; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.813484

Filename

813484