Characterization of thin ferroelectric films for tunable microwave devices - result analysis according to the PLD deposit conditions

Author

Seaux, J.F. ; Cros, D. ; Madrangeas, V. ; Delage, T. ; Champeaux, C. ; Catherinot, A.

Author_Institution

IRCOM, UMR CNRS, Limoges, France

Volume

3

fYear

2004

fDate

6-11 June 2004

Firstpage

1915

Abstract

Thin film barium strontium titanate (BST) has been investigated for over ten years because of their important dielectric constant which depends on the BST composition (Ba/Sr ratio and Ti composition), the temperature of the device and DC bias voltage applied. We have developed a measurement technique to determine the dielectric constant and the loss tangent of BST thin film at 12 GHz. The deposit conditions by laser ablation (PLD) have been optimized to obtain a good crystallographic and dielectric properties. The objective then is to design reconfigurable microwave devices based on ferroelectric films.

Keywords

barium compounds; dielectric properties; ferroelectric thin films; microwave devices; pulsed laser deposition; 12 GHz; BST composition; BST thin film; Ba/Sr ratio; BaSrTiO₃; DC bias voltage; PLD deposit conditions; Ti composition; barium strontium titanate; crystallographic properties; dielectric constant; dielectric properties; laser ablation; loss tangent; reconfigurable microwave devices; thin ferroelectric films; tunable microwave devices; Barium; Binary search trees; Dielectric constant; Dielectric thin films; Ferroelectric films; Microwave devices; Strontium; Thin film devices; Titanium compounds; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1338983

Filename

1338983