DocumentCode
3493185
Title
Electrical properties of ZnSe Langmuir-Blodgett film MIS devices
Author
Das-Gupta, D.K. ; Townshend, P. ; Williams, J.O. ; Mayers, F.R. ; Luk, S. ; Maung, N.
Author_Institution
Sch. of Electron. Eng. Sci., Univ. Coll. of North Wales, Bangor, UK
fYear
1988
fDate
16-20 Oct 1988
Firstpage
202
Lastpage
207
Abstract
A typical set of current-voltage characteristics of an Au-GaAs-ZnSe-Au device in the temperature range of -23.5 to 53°C is presented. It is demonstrated that the conduction mechanism in sandwich structures of Au-GaAs-ZnSe-Au is electrode limited, the Schottky barrier being lowered at the interface. This barrier has been observed to be nonideal, possible due to the presence of interface states at the ZnSe surface
Keywords
Langmuir-Blodgett films; Schottky effect; gallium arsenide; gold; interface electron states; metal-insulator-semiconductor devices; zinc compounds; -23.5 to 53 degC; Au-GaAs-ZnSe-Au device; Langmuir-Blodgett film MIS devices; Schottky barrier; conduction mechanism; current-voltage characteristics; interface states; sandwich structures; Current-voltage characteristics; Gallium arsenide; Light emitting diodes; MIS devices; Mechanical factors; Semiconductor films; Silicon compounds; Substrates; Temperature distribution; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation and Dielectric Phenomena, 1988. Annual Report., Conference on
Conference_Location
Ottawa, Ont.
Type
conf
DOI
10.1109/CEIDP.1988.26333
Filename
26333
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