• DocumentCode
    349326
  • Title

    Degradation of proton implanted VCSEL´s due to electrostatic discharge pulses

  • Author

    Neitzert, H.C. ; Gobbi, B.

  • Author_Institution
    Dipt. di Elettronica, Salerno Univ., Italy
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    202
  • Abstract
    We performed step-stress human body model electrostatic discharge tests both under fonvard and under reverse bias conditions with the ESD pulse amplitude increasing in 50 V steps. In the case of the VCSEL forward bias stress also the resulting optical emission transients during the ESD tests have been measured using a fast photodiode
  • Keywords
    electrostatic discharge; ion implantation; optical testing; photodiodes; semiconductor device testing; surface emitting lasers; 10 mA; ESD pulse amplitude; VCSEL forward bias stress; electrostatic discharge pulses; fast photodiode; optical emission transients; proton implanted VCSEL; step-stress human body model electrostatic discharge tests; Biological system modeling; Degradation; Electrostatic discharge; Humans; Optical pulses; Performance evaluation; Protons; Stress; Testing; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
  • Conference_Location
    San Francisco, CA
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-5634-9
  • Type

    conf

  • DOI
    10.1109/LEOS.1999.813549
  • Filename
    813549