DocumentCode
349326
Title
Degradation of proton implanted VCSEL´s due to electrostatic discharge pulses
Author
Neitzert, H.C. ; Gobbi, B.
Author_Institution
Dipt. di Elettronica, Salerno Univ., Italy
Volume
1
fYear
1999
fDate
1999
Firstpage
202
Abstract
We performed step-stress human body model electrostatic discharge tests both under fonvard and under reverse bias conditions with the ESD pulse amplitude increasing in 50 V steps. In the case of the VCSEL forward bias stress also the resulting optical emission transients during the ESD tests have been measured using a fast photodiode
Keywords
electrostatic discharge; ion implantation; optical testing; photodiodes; semiconductor device testing; surface emitting lasers; 10 mA; ESD pulse amplitude; VCSEL forward bias stress; electrostatic discharge pulses; fast photodiode; optical emission transients; proton implanted VCSEL; step-stress human body model electrostatic discharge tests; Biological system modeling; Degradation; Electrostatic discharge; Humans; Optical pulses; Performance evaluation; Protons; Stress; Testing; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-5634-9
Type
conf
DOI
10.1109/LEOS.1999.813549
Filename
813549
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