• DocumentCode
    3493459
  • Title

    Analysis of LDMOS for effect of finger and device-width on gate feedback charge

  • Author

    Permata, Prima Sukma ; Anwar, Mohammed Sadique ; Siddiqui, Md Imran ; Yang, Shao-Ming ; Tsai, Jung-Ruey ; Sheu, Gene

  • Author_Institution
    Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan
  • fYear
    2012
  • fDate
    23-25 Aug. 2012
  • Firstpage
    519
  • Lastpage
    523
  • Abstract
    In this paper, we have simulated and analyzed the effect of fingers, device-width and main power supply (Vdd) on gate feedback charge (Qgd) and switching time of LDMOS by gate charge test circuit simulation. Gate feedback charge is the charge which is required to fill the gate-drain “Miller” capacitance. Smaller area will have smaller charge and switching time. It has been seen in our simulation that gate feedback charge (Qgd) and switching time increased more linearly with device width rather than no. of fingers and main power supply (Vdd). We have successfully simulated that to improve the device´s power by increased the area, multi finger design is better than the width extension due to the lower gate feedback charge and faster switching time.
  • Keywords
    MOSFET; circuit simulation; LDMOS; device width; gate charge test circuit simulation; gate feedback charge; gate-drain Miller capacitance; multifinger design; switching time; Capacitance; Educational institutions; Fingers; Logic gates; Microelectronics; Power MOSFET; Switches; Device-width Effects; Gate Feedback Charge; Number of Fingers; Switching time;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
  • Conference_Location
    Changchun, Jilin
  • Print_ISBN
    978-1-4673-2638-4
  • Type

    conf

  • DOI
    10.1109/ICoOM.2012.6316329
  • Filename
    6316329