DocumentCode
3493459
Title
Analysis of LDMOS for effect of finger and device-width on gate feedback charge
Author
Permata, Prima Sukma ; Anwar, Mohammed Sadique ; Siddiqui, Md Imran ; Yang, Shao-Ming ; Tsai, Jung-Ruey ; Sheu, Gene
Author_Institution
Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan
fYear
2012
fDate
23-25 Aug. 2012
Firstpage
519
Lastpage
523
Abstract
In this paper, we have simulated and analyzed the effect of fingers, device-width and main power supply (Vdd) on gate feedback charge (Qgd) and switching time of LDMOS by gate charge test circuit simulation. Gate feedback charge is the charge which is required to fill the gate-drain “Miller” capacitance. Smaller area will have smaller charge and switching time. It has been seen in our simulation that gate feedback charge (Qgd) and switching time increased more linearly with device width rather than no. of fingers and main power supply (Vdd). We have successfully simulated that to improve the device´s power by increased the area, multi finger design is better than the width extension due to the lower gate feedback charge and faster switching time.
Keywords
MOSFET; circuit simulation; LDMOS; device width; gate charge test circuit simulation; gate feedback charge; gate-drain Miller capacitance; multifinger design; switching time; Capacitance; Educational institutions; Fingers; Logic gates; Microelectronics; Power MOSFET; Switches; Device-width Effects; Gate Feedback Charge; Number of Fingers; Switching time;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location
Changchun, Jilin
Print_ISBN
978-1-4673-2638-4
Type
conf
DOI
10.1109/ICoOM.2012.6316329
Filename
6316329
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