Monte-Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections

Author

Riolino, I. ; Braccioli, M. ; Lucci, L. ; Esseni, D. ; Fiegna, C. ; Palestri, P. ; Selmi, L.

Author_Institution

DIEGM, Udine Univ.

fYear

2006

fDate

Sept. 2006

Firstpage

162

Lastpage

165

Abstract

In this paper, two Monte-Carlo simulators implementing different models of the influence of carrier quantization on the electrostatics and transport are applied to sub-100nm double-gate SOI devices. To this purpose a new stable and efficient scheme to implement the contacts in the simulation of DG SOI devices is introduced first. Then, results in terms of drain current and microscopic quantities are compared, providing a comparison between a well assessed semiclassical tool and a more rigorous multi-subband code

Keywords

MOSFET; Monte Carlo methods; carrier mobility; electrostatics; semiconductor device models; silicon-on-insulator; 3D-electron gas; Monte-Carlo simulation; carrier quantization; carrier transport; decananometric double-gate SOI; electrostatics; multi-subband code; quantum corrections; semiclassical tool; sub-100nm SOI device; Effective mass; Electrons; Electrostatics; MOSFETs; Particle scattering; Poisson equations; Quantization; Semiconductor films; Silicon; Strontium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307663

Filename

4099881