DocumentCode
3493557
Title
Thermal resistance calculation of AlGaN/GaN on SiC devices
Author
Darwish, Ali M. ; Bayba, Andrew ; Hung, H. Alfred
Author_Institution
Army Res. Lab., Adelphi, MD, USA
Volume
3
fYear
2004
fDate
6-11 June 2004
Firstpage
2039
Abstract
We present an original, accurate, closed-form expression for the thermal resistance of multifingers AlGaN/GaN on SiC FET devices. The model takes into account the thickness of GaN and SiC layers, the gate pitch, length, and width. The model´s validity is verified by comparing it with the results of numerical simulations for many different devices. Very close (1-2%) agreement is observed in general. The model is also compared with experimental observations.
Keywords
III-V semiconductors; aluminium compounds; field effect transistors; semiconductor device models; silicon compounds; temperature distribution; thermal resistance measurement; wide band gap semiconductors; AlGaN-GaN; GaN thickness; SiC; SiC FET devices; SiC layers; closed form expression; gate pitch; multifingers; numerical simulations; thermal resistance calculation; Aluminum gallium nitride; FETs; Fingers; Gallium nitride; Isothermal processes; Numerical simulation; Silicon carbide; Temperature; Thermal management; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-8331-1
Type
conf
DOI
10.1109/MWSYM.2004.1339014
Filename
1339014
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