• DocumentCode
    3493708
  • Title

    Carbon nanotube field-effect transistor for GHz operation

  • Author

    Bethoux, J.-M. ; Happy, H. ; Dambrine, G. ; Borghetti, J. ; Derycke, V. ; Goffman, M. ; Bourgoin, J.P.

  • Author_Institution
    Inst. d´´Electronique, de Microelectronique et de Nanotechnologie, Villeneuve d´´Ascq
  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    206
  • Lastpage
    209
  • Abstract
    The paper reports high frequency (HF) performance of carbon nanotube field-effect transistors (CNT-FETs) with S-parameters measurements. The optimized device structure achieves current gain cut-off frequency FT of 1 GHz, with a slope of -20dB/decade, for the first time
  • Keywords
    S-parameters; carbon nanotubes; microwave field effect transistors; 1 GHz; CNT-FET; S-parameter measurement; carbon nanotube field-effect transistor; high frequency performance; Aluminum oxide; CNTFETs; Carbon nanotubes; Coplanar transmission lines; Frequency; Gold; Hafnium; Impedance; Oxidation; Self-assembly;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
  • Conference_Location
    Montreux
  • ISSN
    1930-8876
  • Print_ISBN
    1-4244-0301-4
  • Type

    conf

  • DOI
    10.1109/ESSDER.2006.307674
  • Filename
    4099892
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3493708