Piezoelectrically transduced high-Q silica micro resonators

Author

Zhengzheng Wu ; Peczalski, A. ; Thakar, V.A. ; Zongliang Cao ; Yi Yuan ; Guohong He ; Peterson, Rebecca L. ; Najafi, Khalil ; Rais-Zadeh, Mina

Author_Institution

Electr. Eng. Dept., Univ. of Michigan, Ann Arbor, MI, USA

fYear

2013

fDate

20-24 Jan. 2013

Firstpage

122

Lastpage

125

Abstract

In this paper, we report on high-performance piezoelectric-on-silica micromechanical resonators for integrated timing applications. Fused silica is used as the resonator structural material for its excellent material properties, and thin film aluminum nitride is used as the piezoelectric transduction layer. A silica resonator is demonstrated with a high quality factor (Q_U~25,841), low motional impedance (R_m ~350 Ω), and good power handling capability. The measured f×Q product of this resonator is the highest amongst reported micromachined silica/fused quartz resonators.

Keywords

III-V semiconductors; crystal resonators; microfabrication; micromachining; micromechanical resonators; microsensors; piezoelectric transducers; silicon compounds; thin film sensors; wide band gap semiconductors; AlN; SiO₂; integrated timing application; low motional impedance; micromachined silica-fused quartz resonator; piezoelectrically transduced high-Q silica micromechanical resonator; power handling capability; resonator structural material; thin film aluminum nitride; Couplings; Micromechanical devices; Oscillators; Resonant frequency; Silicon; Silicon compounds; Vibrations;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on

Conference_Location

Taipei

ISSN

1084-6999

Print_ISBN

978-1-4673-5654-1

Type

conf

DOI

10.1109/MEMSYS.2013.6474192

Filename

6474192