Temperature Dependent Dielectric Absorption of MIM Capacitors: RF Characterization and Modeling

Author

Riess, P. ; Baumgartner, P.

Author_Institution

Infineon Technol., Munich

fYear

2006

fDate

Sept. 2006

Firstpage

459

Lastpage

462

Abstract

This paper presents dielectric absorption measurements of a MIM capacitor between 100Hz and 10GHz over a broad temperature range. The activation energy of the dielectric absorption is extracted and a new model, taking the temperature dependency of the dielectric absorption into account, is presented. Finally the impact of the temperature dependent dielectric absorption on the MIM capacitors RF performance and MIM capacitor based circuit simulation is discussed

Keywords

MIM devices; absorption; capacitors; dielectric measurement; semiconductor device measurement; semiconductor device models; 100 to 10E9 Hz; MIM capacitors; RF characterization; RF modeling; activation energy; dielectric absorption measurements; temperature dependent dielectric absorption; Absorption; Capacitance measurement; Dielectric materials; Dielectric measurements; Frequency measurement; MIM capacitors; Parasitic capacitance; Radio frequency; Size measurement; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307737

Filename

4099955

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3494952