• DocumentCode
    349511
  • Title

    Thermal annealing behavior of iron implanted into alumina

  • Author

    Kobayashi, Tomohiro ; Terai, Takayuki

  • Author_Institution
    Sch. of Eng., Tokyo Univ., Japan
  • Volume
    2
  • fYear
    1999
  • fDate
    36495
  • Firstpage
    1093
  • Abstract
    Single crystal alumina was implanted with 2.6×1017 Fe+/cm2 at 380 keV. The specimens were annealed at 1073 K and the change of the iron distribution profile and the charge state were investigated. Furthermore, the electrical property and surface morphology were discussed in connection with the behavior of iron
  • Keywords
    alumina; annealing; impurity distribution; ion implantation; iron; surface structure; 1073 K; 380 keV; Al2O3:Fe; Al2O3:Fe+; alumina; charge state; distribution profile; electrical property; single crystal; surface morphology; thermal annealing; Annealing; Atomic force microscopy; Ceramics; Ion accelerators; Ion beams; Ion implantation; Ion sources; Iron; Semiconductor materials; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1998.813872
  • Filename
    813872
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=349511