Evaluation of plasma doping for sub-0.18 μm devices

Author

Lenoble, D. ; Goeckner, M.J. ; Felch, S.B. ; Fang, Z. ; Galvier, J. ; Grouillet, A.

Author_Institution

CNET, Meylan, France

Volume

2

fYear

1999

fDate

36495

Firstpage

1222

Abstract

The current drive to develop 0.13 μm and smaller devices requires the development of alternate doping technologies, like plasma doping (PLAD) and Ultra-Low Energy (ULE) beamline ion implantation. This paper evaluates PLAD capabilities for 0.18 to 0.13 μm devices. Multiple process parameters and the resulting implant characteristics are examined. To determine Si and SiO₂ stability during PLAD, substrates including bare Si wafers, wafers with SiO₂ cap layers and photoresist patterned wafers are implanted. Anneals range from as-implanted to 950-1050°C for 10-30 s with various ambients. Implant profiles obtained by plasma doping are compared to those obtained with a low-energy beamline implanter (Varian SHC-80). A 490-Å junction depth with a sheet resistance ~400 Ω/□ is achieved

Keywords

annealing; doping profiles; electrical resistivity; elemental semiconductors; ion implantation; plasma materials processing; semiconductor doping; semiconductor junctions; semiconductor-insulator boundaries; silicon; silicon compounds; 0.13 to 0.18 mum; 10 to 30 s; 490 A; 950 to 1050 C; PLAD capabilities; Si; Si-SiO₂; SiO₂; SiO₂ cap layers; annealing; bare Si wafers; doping technologies; implant characteristics; implant profiles; junction depth; multiple process parameters; photoresist patterned wafers; plasma doping; sheet resistance; sub-0.18 μm devices; Annealing; Doping; Implants; Plasma applications; Plasma chemistry; Plasma devices; Plasma immersion ion implantation; Plasma properties; Plasma stability; Telecommunications;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813907

Filename

813907