DocumentCode
349543
Title
Microcavities formed by hydrogen or helium plasma immersion ion implantation
Author
Chu, Paul K. ; Cheung, Nathan W. ; Chan, Chung
Author_Institution
Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, China
Volume
2
fYear
1999
fDate
36495
Firstpage
1238
Abstract
Microcavities or bubbles formed by hydrogen and helium plasma immersion ion implantation (PIII) possess many interesting properties. For instance, they emit light similar to porous silicon, but since they are buried, the optical properties are not affected by surface conditions such as those encountered by conventional porous silicon materials. These bubbles also form excellent internal gettering sites for metal impurities and are stable even at high temperature. Last but not least, the ion-cut/bonding technology utilizing the stress created by these microcavities to achieve thin film transfer is used to fabricate silicon-on-insulator (SOI)
Keywords
bubbles; getters; helium; hydrogen; ion implantation; silicon-on-insulator; voids (solid); H; He; SOI; Si-SiO2; bubbles formation; internal gettering sites; metal impurities; microcavities formation; plasma immersion ion implantation; silicon-on-insulator; Helium; Hydrogen; Microcavities; Optical films; Optical materials; Particle beam optics; Plasma immersion ion implantation; Plasma properties; Silicon on insulator technology; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1998.813911
Filename
813911
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