• DocumentCode
    349543
  • Title

    Microcavities formed by hydrogen or helium plasma immersion ion implantation

  • Author

    Chu, Paul K. ; Cheung, Nathan W. ; Chan, Chung

  • Author_Institution
    Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, China
  • Volume
    2
  • fYear
    1999
  • fDate
    36495
  • Firstpage
    1238
  • Abstract
    Microcavities or bubbles formed by hydrogen and helium plasma immersion ion implantation (PIII) possess many interesting properties. For instance, they emit light similar to porous silicon, but since they are buried, the optical properties are not affected by surface conditions such as those encountered by conventional porous silicon materials. These bubbles also form excellent internal gettering sites for metal impurities and are stable even at high temperature. Last but not least, the ion-cut/bonding technology utilizing the stress created by these microcavities to achieve thin film transfer is used to fabricate silicon-on-insulator (SOI)
  • Keywords
    bubbles; getters; helium; hydrogen; ion implantation; silicon-on-insulator; voids (solid); H; He; SOI; Si-SiO2; bubbles formation; internal gettering sites; metal impurities; microcavities formation; plasma immersion ion implantation; silicon-on-insulator; Helium; Hydrogen; Microcavities; Optical films; Optical materials; Particle beam optics; Plasma immersion ion implantation; Plasma properties; Silicon on insulator technology; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1998.813911
  • Filename
    813911