Narrow-band HTS filter on sapphire substrate

Author

Hong, Jia-Sheng ; McErlean, Eamon P.

Author_Institution

Dept. of Electr., Electron. & Comput. Eng., Heriot-Watt Univ., Edinburgh, UK

Volume

2

fYear

2004

fDate

6-11 June 2004

Firstpage

1105

Abstract

This paper presents a narrow-band HTS bandpass filter on sapphire substrate for future mobile communications systems. The filter is designed to have a five MHz pass band in the UMTS base stations receive band. The filter exhibits a eight-pole quasi-elliptic function response implemented with a cascaded quadruplet coupling structure. The filter was fabricated on a 0.43 mm-thick sapphire wafer with double-sided YBCO films. The measured filter showed a midband insertion loss of 0.5 dB at 1973 MHz and a return loss better than -15 dB over the pass band. It also exhibited an excellent rejection over the entire UMTS base station transmission band.

Keywords

3G mobile communication; band-pass filters; barium compounds; high-temperature superconductors; microstrip filters; superconducting filters; superconducting thin films; yttrium compounds; 0.43 mm; 0.5 dB; 1973 MHz; 5 MHz; Al₂O₃; UMTS base station transmission band; UMTS base stations receive band; YBa₂Cu₃O₇; bandpass filter; cascaded quadruplet coupling structure; double-sided YBCO films; eight-pole quasielliptic function; high temperature superconductors; midband insertion loss; mobile communications systems; narrow band HTS filter; sapphire substrate; sapphire wafer; 3G mobile communication; Band pass filters; Base stations; Dielectric losses; Dielectric substrates; Fabrication; High temperature superconductors; Narrowband; Resonator filters; Yttrium barium copper oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1339178

Filename

1339178