DocumentCode
3496931
Title
An equivalent circuit model for the long-wavelength quantum well infrared detectors
Author
Li, L. ; Weng, Q.C. ; Wen, J. ; Xiong, D.Y.
Author_Institution
Key Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China
fYear
2012
fDate
28-31 Aug. 2012
Firstpage
63
Lastpage
64
Abstract
We present an equivalent circuit model for AlGaAs/GaAs long wavelength quantum well infrared photodetectors (LW-QWIPs). Bias dependence of the dark current and photocurrent is described with the aid of analogue circuit modelling technique in TINA software. This model can be integrated with the readout circuit for the whole device circuit optimization further. The temperature dependence of dark current has also been incorporated into this circuit model. The designed parameters of the LW-QWIPs can be fed into this model as user-defined inputs to simulate the detector performance. The obtained results agree well with the experimental measurements.
Keywords
equivalent circuits; infrared detectors; photoconductivity; quantum well devices; AlGaAs-GaAs; dark current; device circuit optimization; equivalent circuit; long wavelength quantum well infrared detectors; photocurrent; readout circuit; Dark current; Equations; Equivalent circuits; Integrated circuit modeling; Mathematical model; Photoconductivity; Photodetectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location
Shanghai
ISSN
2158-3234
Print_ISBN
978-1-4673-1602-6
Type
conf
DOI
10.1109/NUSOD.2012.6316508
Filename
6316508
Link To Document