• DocumentCode
    3496931
  • Title

    An equivalent circuit model for the long-wavelength quantum well infrared detectors

  • Author

    Li, L. ; Weng, Q.C. ; Wen, J. ; Xiong, D.Y.

  • Author_Institution
    Key Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China
  • fYear
    2012
  • fDate
    28-31 Aug. 2012
  • Firstpage
    63
  • Lastpage
    64
  • Abstract
    We present an equivalent circuit model for AlGaAs/GaAs long wavelength quantum well infrared photodetectors (LW-QWIPs). Bias dependence of the dark current and photocurrent is described with the aid of analogue circuit modelling technique in TINA software. This model can be integrated with the readout circuit for the whole device circuit optimization further. The temperature dependence of dark current has also been incorporated into this circuit model. The designed parameters of the LW-QWIPs can be fed into this model as user-defined inputs to simulate the detector performance. The obtained results agree well with the experimental measurements.
  • Keywords
    equivalent circuits; infrared detectors; photoconductivity; quantum well devices; AlGaAs-GaAs; dark current; device circuit optimization; equivalent circuit; long wavelength quantum well infrared detectors; photocurrent; readout circuit; Dark current; Equations; Equivalent circuits; Integrated circuit modeling; Mathematical model; Photoconductivity; Photodetectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
  • Conference_Location
    Shanghai
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-4673-1602-6
  • Type

    conf

  • DOI
    10.1109/NUSOD.2012.6316508
  • Filename
    6316508