• DocumentCode
    3497391
  • Title

    A 170 volt polysilicon-emitter complementary bipolar IC technology with full dielectric isolation

  • Author

    McGregor, Joel M. ; Yindeepol, Wipawan ; DeSaints, J. ; Brown, Kevin C. ; Bashir, Rashid ; McKeown, William

  • Author_Institution
    Nat. Semicond. Corp., Santa Clara, CA, USA
  • fYear
    1997
  • fDate
    28-30 Sep 1997
  • Firstpage
    183
  • Lastpage
    186
  • Abstract
    A high-speed, high-voltage polysilicon-emitter complementary bipolar IC process is described. Process features include >170 V NPN and PNP BVceo, dielectric isolation using a bonded wafer substrate and deep trenches, polysilicon resistors, polysilicon to metal capacitors, and a two-level metal back end
  • Keywords
    bipolar integrated circuits; integrated circuit technology; isolation technology; power integrated circuits; 170 V; Si; VIP-4H; bonded wafer substrate; deep trench; dielectric isolation; high-speed high-voltage circuit; polysilicon resistor; polysilicon to metal capacitor; polysilicon-emitter complementary bipolar IC technology; two-level metal back end; Bipolar integrated circuits; Boron; Capacitors; Dielectric substrates; Epitaxial layers; Etching; High speed integrated circuits; Isolation technology; Oxidation; Resistors; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-3916-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.1997.647431
  • Filename
    647431
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3497391