DocumentCode
3498158
Title
Fixed-load energy recovery memory for low power
Author
Kim, Joohee ; Ziesler, Conrad H.
Author_Institution
Adv. Comput. Archit. Lab., Michigan Univ., Ann Arbor, MI, USA
fYear
2004
fDate
19-20 Feb. 2004
Firstpage
145
Lastpage
150
Abstract
This paper proposes an energy recovery SRAM that achieves significant dynamic power savings by recovering energy stored in large bit line capacitors. Memory load to power-clock during write is kept fixed by precharging non-selective after each write cycle. Load during read is also kept fixed by not driving the bit lines with power-clock for read. A simple power-clock generator control scheme that exploits the fixed-load characteristics of the energy recovery memory is introduced to achieve substantially reduced total system power dissipation. The power-clock control scheme reduces system dissipation by preventing the replenishing operation of the power-clock generator while not writing and thus does not require energy transfer between the memory and the power-clock. Hspice simulations of a full custom 128×256 energy recovery SRAM core show over 4.77× more efficient write operations in comparison with its conventional counterpart at 2.5V, 250MHz. Simulations with a power-clock generator show that disabling power-clock replenishing, whenever memory does not write, achieves savings over 1.47× on total system power over that of a system without the power-clock control.
Keywords
SPICE; SRAM chips; capacitors; load management; memory architecture; 2.5 V; 250 MHz; Hspice simulations; bit line capacitors; dynamic power savings; energy recovery SRAM; energy stored recovery; energy transfer; fixed-load characteristics; fixed-load energy recovery memory; memory load; power-clock control; power-clock generator control scheme; power-clock replenishing; precharging nonselective; replenishing operation; system power dissipation; write cycle; write operations; Capacitors; Computational modeling; Control systems; Driver circuits; Energy efficiency; Power dissipation; Power generation; Random access memory; Timing; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI, 2004. Proceedings. IEEE Computer society Annual Symposium on
Print_ISBN
0-7695-2097-9
Type
conf
DOI
10.1109/ISVLSI.2004.1339522
Filename
1339522
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