Design and Scaling of SiGe BiCMOS VCOs Above 100GHz

Author

Nicolson, S.T. ; Yau, K.H.K. ; Tang, K.A. ; Chevalier, P. ; Chantre, A. ; Sautreuil, B. ; Voinigescu, S.P.

Author_Institution

Edward S. Rogers Sr. Dept. of Elec. & Comp. Eng., Toronto Univ., Ont.

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

This paper presents a comparison of 100 GHz Colpitts VCOs fabricated in two generations of SiGe BiCMOS technology, with MOS and HBT varactors and with integrated inductors. Based on a study of the optimal biasing conditions for minimum phase noise, it is shown that VCOs can be used to monitor the noise performance of the SiGe HBTs at mm-waves. Measurements and simulations show a 104 GHz VCO operating from 2.5 V with phase noise of -101.3 dBc/Hz at 1 MHz offset, which delivers +2.7 dBm of differential output power at 25degC, with operation up to 125degC

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; inductors; integrated circuit noise; millimetre wave integrated circuits; millimetre wave oscillators; phase noise; varactors; voltage-controlled oscillators; 100 GHz; 104 GHz; 2.5 V; 25 C; BiCMOS VCO; Colpitts VCO; HBT varactors; MOS varactors; SiGe; integrated inductors; millimeter-wave circuits; voltage-controlled oscillators; BiCMOS integrated circuits; Condition monitoring; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Noise measurement; Phase noise; Power measurement; Silicon germanium; Varactors; Millimeter-wave circuits; SiGe BiCMOS technology; W-band; phase-noise; voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311135

Filename

4100203