• DocumentCode
    3498715
  • Title

    A single-walled carbon nanotubes betavoltaic microcell

  • Author

    Chang, Y.Y. ; Chen, Choon Chowe ; Liu, Peng ; Zhang, Juyong

  • Author_Institution
    Nat. Key Lab. of Micro/Nanometer Fabrication Technol., Peking Univ., Beijing, China
  • fYear
    2013
  • fDate
    20-24 Jan. 2013
  • Firstpage
    825
  • Lastpage
    828
  • Abstract
    This paper reports a new type betavoltaic (BV) microcell based on intrinsic p-type semiconductive single-walled carbon nanotubes (s-SWNTs). Our device composes of Au and Ti asymmetrical electrode pairs with s-SWNTs laid over them forming Schottky junction with Ti and ohmic contact with Au. SWNT bundles were self-assembled between Au and Ti electrodes by Dieletrophoretic (DEP) technique, and metallic SWNTs (m-SWNTs) were selectively eliminated by current-induced electrical breakdown method. 3.3mCi/cm2 thin-film 63Ni serves as β particles source, with 100-year half-time and low toxicity. Test results show that SWNTs BV microcell has the open circuit voltage (VOC) of 26mV, short circuit current density (JSC) of 2.19μA/cm2 and energy conversion efficiency (η) of 4.44%.
  • Keywords
    carbon nanotubes; cells (electric); current density; electrodes; gold; microfabrication; ohmic contacts; self-assembly; semiconductor device breakdown; thin film devices; titanium; β particles source; Au-Ti; BV; DEP; Schottky junction; asymmetrical electrode pair; current-induced electrical breakdown method; dieletrophoretic technique; efficiency 4.44 percent; energy conversion efficiency; intrinsic p-type semiconductive s-SWNT; m-SWNT; metallic SWNT; ohmic contact; open circuit voltage; self-assembly; short circuit current density; single-walled carbon nanotubes betavoltaic microcell; time 100 year; voltage 26 mV; Carbon nanotubes; Electrodes; Fingers; Gold; Microcell networks; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
  • Conference_Location
    Taipei
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-5654-1
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2013.6474370
  • Filename
    6474370