Reliability Issues in SiGe HBTs Fabricated on CMOS-Compatible Thin-Film SOI

Author

Bellini, Marco ; Chen, Tianbing ; Zhu, Chendong ; Cressler, John D. ; Cai, Jin

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

A comprehensive investigation of reliability issues in both fully-depleted and partially-depleted SiGe HBTs-on-SOI is presented. The devices were subjected to "mixed-mode" stress at 300 K and at 77 K, and the changes in base current I_B, collector resistance R_c, M-1, and AC performance were analyzed. A comparison of mixed-mode stress to conventional reverse EB bias stress is also made, and significant differences are observed. The thermal resistance R_th of the devices is extracted over the 50 K - 300 K range

Keywords

CMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; semiconductor device reliability; silicon-on-insulator; thin film circuits; 50 to 300 K; AC performance; CMOS-compatible thin-film SOI; HBT; SiGe; base current; collector resistance; heterojunction bipolar transistor; mixed-mode stress; reliability issues; thermal resistance; CMOS technology; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Performance analysis; Silicon germanium; Substrates; Thermal stresses; USA Councils; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311155

Filename

4100223