Preparation and operation characteristics of nano-scale channel length vertical structure Zinc Oxide Thin Film Transistor

Author

Yue Shan ; Dongxing Wang ; Yue Zhang ; Jiabin Chen ; Hao Zhang ; Jinghua Yin ; Hong Zhao

Author_Institution

Dept. of Electron. Sci. & Technol., Harbin Univ. of Sci. & Technol., Harbin, China

Volume

01

fYear

2013

fDate

16-18 Aug. 2013

Firstpage

194

Lastpage

197

Abstract

At room temperature, using with substrate of quartz glass, ZnO as active layer, we designed and prepared Zinc Oxide Thin Film Transistor with the structure of Ag/ZnO/Al/ZnO/Ag. The device shows the advantage of large operation electric current, low operate voltage and high charge carriers mobility and so on. When the device works, the drain could achieve at 9.15 mA, the threshold voltage Vth is only about 1.35 V, while the gate voltage VGS is 0.2 V, VDS is 3 V. The channel length is at only nano-scale.

Keywords

II-VI semiconductors; carrier mobility; low-power electronics; nanofabrication; nanostructured materials; semiconductor growth; thin film transistors; wide band gap semiconductors; zinc compounds; SiO₂; ZnO; current 9.15 mA; high charge carrier mobility; large operation electric current; low operation voltage; nanoscale channel length vertical structure; quartz glass; voltage 0.2 V; voltage 3 V; zinc oxide thin film transistor; Artificial intelligence; Equations; Logic gates; Magnetic films; Mathematical model; Transistors; Zinc oxide; RF Magnetron Sputtering; ZnO-TFT; carriers mobility;

fLanguage

English

Publisher

ieee

Conference_Titel

Measurement, Information and Control (ICMIC), 2013 International Conference on

Conference_Location

Harbin

Print_ISBN

978-1-4799-1390-9

Type

conf

DOI

10.1109/MIC.2013.6757945

Filename

6757945