Schottky Barrier Diodes for Millimeter Wave SiGe BiCMOS Applications

Author

Rassel, R.M. ; Johnson, J.B. ; Orner, B.A. ; Reynolds, S.K. ; Dahlström, M.E. ; Rascoe, J.S. ; Joseph, A.J. ; Gaucher, B.P. ; Dunn, J.S. ; Onge, S. A St

Author_Institution

Syst. & Technol. Group, IBM, Essex Junction, VT

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

For the first time, a high performance, low leakage Schottky barrier diode (SBD) with cutoff frequency above 1.0 THz in a 130nm SiGe BiCMOS technology for millimeter-wave application is described. Device optimization has been evaluated by varying critical process and layout parameters such as, anode size, cathode depth, cathode resistivity, junction tailoring, and guardring optimization is investigated

Keywords

BiCMOS integrated circuits; Ge-Si alloys; Schottky diodes; millimetre wave integrated circuits; BiCMOS process technology; Schottky barrier diodes; SiGe; cutoff frequency; millimeter wave BiCMOS; millimeter wave diodes; millimeter wave technology; Anodes; BiCMOS integrated circuits; Cathodes; Conductivity; Cutoff frequency; Germanium silicon alloys; Millimeter wave technology; Schottky barriers; Schottky diodes; Silicon germanium; BiCMOS process technology; Schottky diodes; cutoff frequency; millimeter wave diodes; millimeter wave technology; terahertz (THz);

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311167

Filename

4100235