10.6 W cw front-facet power from 100 /spl mu/m-aperture 0.97-/spl mu/m emitting Al-free diode lasers

Author

Al-Muhanna, A. ; Mawst, L.I. ; Botez, D. ; Garbuzov, D.Z. ; Martinelli, R.U. ; Connolly, J.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

11

Lastpage

12

Abstract

Summary form only given. Here we present a 1.3-/spl mu/m waveguide laser structure, designed to suppress second-order-mode oscillation, that operates to record-high cw power for any type of InGaAs active diode lasers. It also emits in a pure fundamental transverse mode to at least 20 W peak pulsed power.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser modes; laser transitions; semiconductor lasers; waveguide lasers; 0.97 mum; 1.3 mum; 10.6 W; 100 mum; Al-free diode lasers; InGaAs; InGaAs active diode lasers; cw front-facet power; peak pulsed power; pure fundamental transverse mode; record-high cw power; second-order-mode oscillation; waveguide laser structure; Copper; Diode lasers; Electrons; Gallium arsenide; Heat sinks; Laser modes; Power generation; Power lasers; Thermal resistance; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.675796

Filename

675796