• DocumentCode
    3499586
  • Title

    A graphene FET gas sensor gated by ionic liquid

  • Author

    Inaba, A. ; Yoo, Gwangwe ; Takei, Y. ; Matsumoto, Kaname ; Shimoyama, Isao

  • Author_Institution
    Univ. of Tokyo, Tokyo, Japan
  • fYear
    2013
  • fDate
    20-24 Jan. 2013
  • Firstpage
    969
  • Lastpage
    972
  • Abstract
    We report a gas sensor based on a field-effect transistor (FET) with a graphene channel and ionic liquid (IL) gate. Graphene is supremely sensitive to its surroundings. Owing to the ~1-nm-thick electric double layer, ILs enable low-voltage operation of the FET. In addition, their solubility selectivity for different gases are controllable. Therefore, the proposed sensor selectively detects low concentration gases at low gate voltage. We fabricated the IL-gate FET using graphene grown by chemical vapor deposition. The current-voltage characteristic of the graphene-FET changed in proportion to logarithm of gas concentration. We demonstrated that our device was able to detect at least 30 ppm of ammonia (NH3) and 4000 ppm of carbon dioxide (CO2) at gate voltage below 1 V. The difference between the current-voltage response to NH3 and CO2 indicates the potential for selective gas measurement.
  • Keywords
    ammonia; carbon compounds; chemical vapour deposition; field effect transistors; gas sensors; graphene; CO2; CVD; IL gate; NH3; chemical vapor deposition; current-voltage response; electric double layer; field-effect transistor; gas concentration; gate voltage; graphene FET gas sensor; graphene channel; ionic liquid; low-voltage operation; selective gas measurement; size 1 nm; solubility selectivity; Current measurement; Field effect transistors; Gas detectors; Graphene; Liquids; Logic gates; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
  • Conference_Location
    Taipei
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-5654-1
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2013.6474408
  • Filename
    6474408