Joint Extraction of the Base and Collector Resistances with the Base-Collector Capacitance Split of HBT/BJT Transistors

Author

Huszka, Z. ; Seebacher, E. ; Pflanzl, W.

Author_Institution

Austriamicrosystems AG

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

A novel approach is described for the simultaneous extraction of the parasitic base and collector resistances along with the internal collector capacitance cjc of HBT/BJT devices. A strong impact of the external access resistances rbx and rcx on the accuracy of cjc extraction is revealed. The interaction is strictly observed at the determination of these and the internal base and collector resistance parameters

Keywords

electric resistance measurement; heterojunction bipolar transistors; semiconductor device measurement; HBT/BJT transistors; base resistance extraction; base-collector capacitance split; collector resistance extraction; external access resistances; internal collector capacitance; Admittance; Bipolar transistors; Electric variables measurement; Equations; Frequency; Heterojunction bipolar transistors; Parasitic capacitance; Testing; Voltage; Yttrium; Bipolar transistor modeling; base resistance; collector capacitance split; collector resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311122

Filename

4100257