A 0.13μm thin SOI CMOS technology with low-cost SiGe:C HBTs and complementary high-voltage LDMOS

Author

Boissonnet, L. ; Judong, F. ; Vandelle, B. ; Rubaldo, L. ; Bouillon, P. ; Dutartre, D. ; Perrotin, A. ; Avenier, G. ; Chevalier, P. ; Chantre, A. ; Rauber, B.

Author_Institution

STMicroelectronics, Crolles

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

We demonstrate the integration, in 0.13μm thin SOI CMOS technology, of low-cost high-performance high-voltage LDMOS and HBT transistors. These specific devices are obtained, without affecting CMOS core process devices. Static and dynamic characteristics for both type of transistors are presented, showing state of the art devices suitable for RF/analog/digital system on chip integration.

Keywords

CMOS integrated circuits; Ge-Si alloys; bipolar transistor circuits; silicon-on-insulator; 0.13 micron; SOI CMOS technology; SiGe; SiGe:C HBT; complementary high-voltage LDMOS; dynamic characteristics; static characteristics; Bipolar transistors; CMOS digital integrated circuits; CMOS process; CMOS technology; Epitaxial growth; Etching; Fabrication; Heterojunction bipolar transistors; Radio frequency; Substrates; 130nm; High-voltage MOS; SOI; analog/RF; bipolar transistors; heterojunction; process integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311124

Filename

4100259